Силовой модуль IGBT SKM400GB126D

9600,00 ₽

Артикул: c5bc8eec28d5 Категории: , ,

      Описание

      IGBT MODULE, DUAL, 1200V
      Transistor Type IGBT Module
      Transistor Polarity N Channel
      Voltage, Vces 1200V
      Current Ic Continuous a Max 260A
      Voltage, Vce Sat Max 1.2V
      Case Style SEMITRANS 3
      Termination Type Screw
      Collector-to-Emitter Breakdown Voltage 1200V
      Current Ic Continuous b Max 190A
      Current Ic av 260A
      Current, Icm Pulsed 200A
      External Depth 61.4mm
      Fixing Centres 93mm
      Fixing Hole Diameter 5.4mm
      SMD Marking SEMITRANS 3
      Temperature, Current 25 C
      Time, Rise 40ns
      Transistors, No. of 2
      Width, External 105mm
      Voltage 1200V