Силовой модуль IGBT SEMIX703GB126HDS

18148,00 

Описание

IGBT MODULE, 2X1200V; Transistor Type:Dual Trench IGBT; Current, Ic Continuous a Max:700A; Voltage, Vce Sat Max:2.15V; Case Style:SEMiX 3s; Current, Ic av:700A; Current, Icm Pulsed:900A; Current, Ifs Max:2900A; Time, Rise:60ns; Voltage, Vceo:1.2V; Voltage, Vrrm:1200V