2MBI200VH модуль

IGBT, 2 PK, V SE, 200A, 1200V, M249G; Transistor Polarity:N Channel; DC Collector Current:240A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:1.11kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:V Series; Module Configuration:Dual