Т183-1600-65 Тиристор

Характеристики

Средний прямой ток ITAV 1600 A

Повторяющееся импульсное напряжение в закрытом состоянии UDRM 5400 ? 6500 В

Повторяющееся импульсное обратное напряжение URRM Время выключения tq 800 мкс

? VDRM /VRRM = 6200 — 6600 V

? IT(AV) = 1835A (TC = 85 C)

? IT(AV) = 2250 A (TC = 70 C)

? ITSM = 40 kA (TVj = 125 C)

Repetitive peak off-state voltage / Repetitive peak reverse voltage,

TVj = — 60 C…+ 125 C VDRM / VRRM 6200 — 6600 V Non-repetitive peak off-state voltage/Non- repetitive peak reverse voltage,

TVj = — 60 C…+ 125 C VDSM / VRSM 6300 — 6700 Repetitive peak off-state current/ Repetitive peak reverse current,

TVj = 125 C, VD / VR = VDRM / VRRM IDRM / IRRM — — 250 mA Max. average on-state current, f = 50 Hz, double side cooled TC = 85 C TC = 70 C IT(AV) — — 1835 2250 A RMS on-state current, f = 50 Hz, TC = 70 C ITRMS — — 3530 Surge non-repetitive current, VR = 0, TVj = 125 C, tp = 10 ms ITSM — — 40 kA Safety factor I 2 t — — 8000 kA2 s Critical rate of rise of on-state current, V = 0.67VDRM, IT = 3200 A, IFG = 2 A, tr = 0.5 µs, f = 50 Hz, TVj =125 C (diT/dt)crit — — 200 A/µs Critical rate of rise of off-state voltage, VD = 0.67VDRM, TVj = 125 C (dVD/dt)crit 1000 — 2000 V/µs Gate power loss, DC PGM — — 4 W Operation junction temperature range TVj — 60 — + 125 C Storage temperature range Tstg — 60 — + 125

Maximum peak on-state voltage, IT = 5020 A, TVj = 25 C VTM — — 2.50 V On-state threshold voltage, TVj = 125 C, IT = 2500 — 8000 A V(TO) — — 1.2 On-state slope resistance, TVj = 125 C, IT = 2500 — 8000 A rT — — 0.35 m? Delay time, V = 0.5VDRM, IT = 1600 A, IFG = 2 A, tr = 0.5 µs, TVj = 25 C td — — 4.0 Circuit-commutated turn off-time, µs IT = 1600 A, diT/dt = — 10 A/µs, VR ? 100 V, VD = 0.67VDRM, (dVD/dt) = 50 V/µs, TVj = 125 C tq — — 700 Recovery charge, diT/dt = — 10 A/µs, TVj = 125 C, IT = 1600 A, VR ? 100 V Qrr — — 7000 µAs Holding current, VD =12 V, TVj = 25 C IH — — 300 mA Latching current, VD = 12 V, tР = 50 µs, TVj = 25 C IL — — 1500 Gate trigger voltage, VD = 12 V, TVj = — 60 C TVj = 25 C TVj = 125 C VGT — — 3.5 2.5 2.0 V Gate trigger current, VD = 12 V, TVj = — 60 C TVj = 25 C TVj = 125 C IGT — — 450 250 200 mA Gate non-trigger voltage, VD = 0.67VDRM, TVj = 125 C VGD 0.35 — — V Gate non-trigger current, VD = 0.67VDRM, TVj = 125 C IGD 15 — — mA THERMAL PARAMETERS Thermal resistance junction to case (DC), double side cooled anode side cooled cathode side cooled Rth(j-c) Rth(j-c)A Rth(j-c)C — — 0.0072 0.0144 0.0144 C/W Thermal resistance case to heatsink, double side cooled single side cooled Rth(c-h) — — 0.0025 0.0050 MECHANICAL PARAMETERS Weight w — — 1.6 kg Mounting force F 60 — 80 kN Maximum acceleration (at nominal mounting force) a — — 100 m/s2 Gate-anode distance on insulator surface Ds 27 — — mm Air strike distance Da 15 — —

Полные Характеристики : 6f5fd4b83f813d75081299f6af51f396